40414hk tc-00003105/62012tkim/d2805imms/31505tsim gb no.8158-1/4 http://onsemi.com semiconductor components industries, llc, 2014 april, 2014 2sk3666 n-channel jfet 30v, 0.6 to 3.0ma, 6.5ms, cp stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ordering information see detailed ordering and shipping information on page 2 of this data sheet. applications ? low-frequency general-purpose amplifer, impedance conversion, infrared sensor applications features ? small igss ? small ciss specifcations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dsx 30 v gate-to-drain voltage v gds --30 v gate current i g 10 ma drain current i d 10 ma allowable power dissipation p d 200 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7013a-011 ordering number : en8158c product & package information ? package : cp ? jeita, jedec : sc-59, to-236, sot-23, to-236ab ? minimum packing quantity : 3,000 pcs./reel packing type: tl marking electrical connection tb 1 : sour ce 2 : drain 3 : gate cp 12 3 1.5 2.5 1.1 0.3 0.05 2.9 0.95 0.4 0.1 0.5 0.5 1 2 3 jk lot no. rank lot no. 2sk3666-2-tb-e 2SK3666-3-TB-E
2sk3666 no.8158-2/4 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max gate-to-drain breakdown voltage v (br)gds i g =-- 10 m a, v ds =0v --30 v gate cutoff current i gss v gs =-- 20v, v ds =0v --1.0 na cutoff voltage v gs (off) v ds =10v, i d =1 m a --0.18 --0.95 --2.2 v drain current i dss v ds =10 v, v gs =0v 0.6* 3.0* ma forward transfer admittance | yfs | v ds =10v, v gs =0v , f=1khz 3.0 6.5 ms input capacitance ciss v ds =10v, v gs =0v , f=1mhz 4 pf reverse transfer capacitance crss v ds =10v, v gs =0v , f=1mhz 1.1 pf static drain-to-source on-state resistance r ds (on) v ds =10mv , v gs =10v 200 w * : the 2sk3666 is classifed by i dss as follows : (unit : ma) rank 2 3 i dss 0.6 to 1.5 1.2 to 3.0 ordering information device package shipping memo 2sk3666-2-tb-e cp 3,000pcs./reel pb free 2SK3666-3-TB-E cp 3,000pcs./reel itr00633 i d - - v ds drain-to-source vo ltage, v ds - - v drain current, i d - - ma 01 .0 2.03 .0 4.05 .0 0 1.0 2.0 3.0 4.0 5.0 v gs =0v - -0.1v - -0.2v - -0.3v - -0.4v v gs =0v - -0.1v - -0.2v - -0.3v - -0.4v hd00635 i d -- v gs gate-to-source vo ltage, v gs - - v drain current, i d - - ma -- 1.50 -- 1.25 -- 1.00 -- 0.75 -- 0.50 -- 0.25 0 0 2 4 6 8 3.0ma 1.0ma itr00634 i d - - v ds drain-to-source vo ltage, v ds - - v drain current, i d - - ma 05 10 15 20 25 30 0 1 2 3 4 5 itr00636 i d -- v gs gate-to-source vo ltage, v gs - - v drain current, i d - - ma -- 1.0 -- 1.2- -0.8 -- 0.6- -0.4 -- 0.20 0 1 2 3 4 5 v ds =10v v ds =10v ta =- -25 c 25 c 75 c product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
2sk3666 no.8158-3/4 02 04 06 08 0 100 120 140 160 0 40 80 200 120 160 240 ambient t emperature, ta - - c p d -- ta allowable power dissipation, p d - - mw itr00646 v gs =0v f=1mhz 1.0 23 57 7 10 23 57 1.0 2 2 7 5 3 5 3 10 drain-to-source vo ltage, v ds - - v ciss -- v ds input capacitance, ciss - - pf hd00641 v gs =0v f=1mhz 1.0 23 57 7 10 23 57 1.0 2 2 7 5 3 7 5 3 10 drain-to-source vo ltage, v ds - - v crss -- v ds output capacitance, crss - - pf hd00642 g s d i d i gdl dc dc i dss =1.0ma 3.0ma cutof f vo ltage, v gs (of f) - - v hd00637 v gs (off ) - - i dss drain current, i dss - - ma 57 1.0 23 57 10 2 7 -- 1.0 5 3 5 3 2 2 v ds =10v i d =1.0 m a hd00638 drain current, i d - - ma v ds =10v f=1khz 0.1 5 3 2 7 5 3 2 1.0 3 2 7 10 5 3 2 2 1.0 7 10 7 5 3 2 itr00639 drain current, i dss - - ma v ds =10v v gs =0v f=1khz 5 3 2 7 5 1.0 2 7 10 5 3 2 3 2 10 1.0 7 05 10 15 20 25 1p 5 3 3 3 3 3 10p 100p 10n 1n 100n drain-to-source vo ltage, v ds - - v i gdl -- v ds gate-to-drain leak current, i gdl - - a itr00640 i d =1ma | y fs | - - i d forward tr ansfer admittance, | y fs | - - ms | y fs | - - i dss forward tr ansfer admittance, | y fs | - - ms
2sk3666 ps no.8158-4/4 on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. outline drawing land pattern example 2sk3666-2-tb-e, 2SK3666-3-TB-E mass (g) unit 0.013 * for reference mm unit: mm 0.95 0.95 1.0 2.4 0.8
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